AT45DB161E-MHD2B-T vs EN25D16-75VI feature comparison

AT45DB161E-MHD2B-T Dialog Semiconductor GmbH

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EN25D16-75VI Elite Semiconductor Memory Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Transferred Contact Manufacturer
Ihs Manufacturer DIALOG SEMICONDUCTOR GMBH ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Reach Compliance Code compliant unknown
Clock Frequency-Max (fCLK) 85 MHz 75 MHz
Data Retention Time-Min 20 20
Endurance 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 Code R-PDSO-N8 R-PDSO-N8
JESD-609 Code e4
Length 6 mm 6 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type FLASH FLASH
Memory Width 1 8
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 16777216 words 2097152 words
Number of Words Code 16000000 2000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 16MX1 2MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code HVSON HVSON
Package Equivalence Code SOLCC8,.25 SOLCC8,.25
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial SERIAL SERIAL
Programming Voltage 2.7 V 3 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 0.6 mm 0.84 mm
Serial Bus Type SPI SPI
Standby Current-Max 0.00001 A 0.000005 A
Supply Current-Max 0.026 mA 0.02 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.5 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Type NOR TYPE NOR TYPE
Width 5 mm 5 mm
Write Protection HARDWARE/SOFTWARE HARDWARE/SOFTWARE
Base Number Matches 4 2
Package Description HVSON, SOLCC8,.25
ECCN Code EAR99
HTS Code 8542.32.00.51
Additional Feature IT ALSO OPERATES AT REGULATED SUPPLY VOLTAGE 3 TO 3.6 V

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