AT45DB161E-SSHD-T vs M25P16SVBA6P feature comparison

AT45DB161E-SSHD-T Silicon Laboratories Inc

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M25P16SVBA6P Numonyx Memory Solutions

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SILICON LABORATORIES INC NUMONYX
Reach Compliance Code unknown unknown
JESD-609 Code e4
Memory IC Type FLASH FLASH
Programming Voltage 2.7 V 2.7 V
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches 5 2
Pbfree Code Yes
Part Package Code DIP
Package Description DIP, DIP8,.3
Pin Count 8
ECCN Code EAR99
HTS Code 8542.32.00.51
Clock Frequency-Max (fCLK) 75 MHz
Data Retention Time-Min 20
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PDIP-T8
Length 9.2 mm
Memory Density 16777216 bit
Memory Width 8
Number of Functions 1
Number of Terminals 8
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 2MX8
Package Body Material PLASTIC/EPOXY
Package Code DIP
Package Equivalence Code DIP8,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Parallel/Serial SERIAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Seated Height-Max 4.8 mm
Serial Bus Type SPI
Standby Current-Max 0.00001 A
Supply Current-Max 0.015 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount NO
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NOR TYPE
Width 7.62 mm
Write Cycle Time-Max (tWC) 15 ms
Write Protection HARDWARE/SOFTWARE

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