AT45DB641E-MHN2B-T
vs
S25FL064LABMFB013
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
DIALOG SEMICONDUCTOR GMBH
|
CYPRESS SEMICONDUCTOR CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| Clock Frequency-Max (fCLK) |
85 MHz
|
108 MHz
|
| JESD-30 Code |
R-PDSO-N8
|
S-PDSO-G8
|
| JESD-609 Code |
e4
|
e3
|
| Length |
6 mm
|
5.28 mm
|
| Memory Density |
67108864 bit
|
67108864 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
1
|
8
|
| Moisture Sensitivity Level |
1
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Number of Words |
67108864 words
|
8388608 words
|
| Number of Words Code |
64000000
|
8000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
105 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
64MX1
|
8MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
HVSON
|
SOP
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
|
SMALL OUTLINE
|
| Parallel/Serial |
SERIAL
|
SERIAL
|
| Programming Voltage |
1.8 V
|
3 V
|
| Seated Height-Max |
0.6 mm
|
2.16 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
2.3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
NICKEL PALLADIUM GOLD
|
MATTE TIN
|
| Terminal Form |
NO LEAD
|
GULL WING
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Type |
NOR TYPE
|
|
| Width |
5 mm
|
5.28 mm
|
| Base Number Matches |
3
|
2
|
| Package Description |
|
SOIC-8
|
| ECCN Code |
|
3A991.B.1.A
|
| HTS Code |
|
8542.32.00.51
|
| Date Of Intro |
|
2016-09-26
|
| Additional Feature |
|
IT ALSO HAVE X1 MEMORY WIDTH
|
| Alternate Memory Width |
|
2
|
| Output Characteristics |
|
3-STATE
|
| Screening Level |
|
AEC-Q100
|
|
|
|
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