AWB512ES4{WIDE-TEMP}
vs
AWB512ES4(LOW-VOLT)
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SEIKO EPSON CORP
|
SEIKO EPSON CORP
|
| Package Description |
,
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
200 ns
|
200 ns
|
| Additional Feature |
2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
|
2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
|
| JESD-30 Code |
X-XXMA-X68
|
X-XXMA-X68
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
SRAM CARD
|
SRAM CARD
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
68
|
68
|
| Number of Words |
262144 words
|
262144 words
|
| Number of Words Code |
256000
|
256000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
60 °C
|
| Operating Temperature-Min |
-20 °C
|
|
| Organization |
256KX16
|
256KX16
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
YES
|
YES
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Voltage-Min |
2.5 V
|
2.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UNSPECIFIED
|
UNSPECIFIED
|
| Base Number Matches |
1
|
2
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
3 V
|
|
|
|
Compare AWB512ES4{WIDE-TEMP} with alternatives
Compare AWB512ES4(LOW-VOLT) with alternatives