B250S vs EDB102S feature comparison

B250S Diotec Semiconductor AG

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EDB102S Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG GALAXY SEMI-CONDUCTOR CO LTD
Part Package Code DIP
Package Description DIP-4
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature UL RECOGNIZED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PDSO-G4
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -50 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 100 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 1.5 µs 0.05 µs
Reverse Test Voltage 600 V
Surface Mount YES YES
Terminal Form GULL WING
Terminal Position DUAL
Base Number Matches 4 3
Breakdown Voltage-Min 100 V

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