B6S-E3/80 vs S1ZB60 feature comparison

B6S-E3/80 Vishay Semiconductors

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S1ZB60 Shindengen Electronic Manufacturing Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Part Package Code TO-269AA
Package Description R-PDSO-G4 R-PDSO-G4
Pin Count 4 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer Vishay
Breakdown Voltage-Min 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.05 V
JEDEC-95 Code TO-269AA
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e6
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.5 A 0.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) TIN BISMUTH
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 2 13

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