BAP63-03,115
vs
BAR63-03W
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Part Package Code |
SOD
|
|
| Package Description |
PLASTIC, SMD, SC-76, 2 PIN
|
R-PDSO-G2
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
SOD323
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| HTS Code |
8541.10.00.70
|
8541.10.00.80
|
| Samacsys Manufacturer |
NXP
|
|
| Application |
ATTENUATOR; SWITCHING
|
SWITCHING
|
| Breakdown Voltage-Min |
50 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
0.32 pF
|
0.3 pF
|
| Diode Capacitance-Nom |
0.4 pF
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Forward Resistance-Max |
1.5 Ω
|
2 Ω
|
| Diode Res Test Current |
0.5 mA
|
5 mA
|
| Diode Res Test Frequency |
100 MHz
|
100 MHz
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
S BAND
|
S BAND
|
| JESD-30 Code |
R-PDSO-G2
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
|
| Minority Carrier Lifetime-Nom |
0.31 µs
|
0.075 µs
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.5 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Test Voltage |
|
20 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
2
|
| ECCN Code |
|
EAR99
|
|
|
|
Compare BAP63-03,115 with alternatives
Compare BAR63-03W with alternatives