BAP64-05,215 vs BAP64-05T/R feature comparison

BAP64-05,215 NXP Semiconductors

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BAP64-05T/R NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00 8541.10.00.80
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Additional Feature HIGH VOLTAGE HIGH VOLTAGE
Application ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING
Breakdown Voltage-Min 175 V 175 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Capacitance-Max 0.35 pF 0.35 pF
Diode Capacitance-Nom 0.52 pF
Diode Element Material SILICON SILICON
Diode Forward Resistance-Max 40 Ω 40 Ω
Diode Res Test Current 0.5 mA
Diode Res Test Frequency 100 MHz
Diode Type PIN DIODE PIN DIODE
Frequency Band S BAND S BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Minority Carrier Lifetime-Nom 1.55 µs 1.55 µs
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal Finish Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 3
Package Description R-PDSO-G3

Compare BAP64-05,215 with alternatives

Compare BAP64-05T/R with alternatives