BAP65-02,135
vs
BAP64LX
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Part Package Code |
SOD
|
SOD
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
SOD523
|
SOD-882T
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00
|
8541.10.00
|
| Factory Lead Time |
13 Weeks
|
|
| Samacsys Manufacturer |
NXP
|
|
| Breakdown Voltage-Min |
30 V
|
60 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
0.9 pF
|
0.3 pF
|
| Diode Capacitance-Nom |
0.65 pF
|
|
| Diode Forward Resistance-Max |
0.9 Ω
|
1.5 Ω
|
| Diode Res Test Current |
5 mA
|
|
| Diode Res Test Frequency |
100 MHz
|
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| JESD-609 Code |
e3
|
e3
|
| Minority Carrier Lifetime-Nom |
0.17 µs
|
1 µs
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Reverse Test Voltage |
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
R-PDSO-N2
|
| Application |
|
ATTENUATOR; SWITCHING
|
| Diode Element Material |
|
SILICON
|
| Frequency Band |
|
S BAND
|
| JESD-30 Code |
|
R-PDSO-N2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation-Max |
|
0.15 W
|
| Qualification Status |
|
Not Qualified
|
| Technology |
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Form |
|
NO LEAD
|
| Terminal Position |
|
DUAL
|
|
|
|
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Compare BAP64LX with alternatives