BAR14-1E6327
vs
BAR14-1E6327
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LOW DISTORTION
|
LOW DISTORTION
|
| Application |
ATTENUATOR; SWITCHING
|
ATTENUATOR; SWITCHING
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
| Diode Capacitance-Max |
0.5 pF
|
0.5 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
HIGH FREQUENCY
|
HIGH FREQUENCY
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Minority Carrier Lifetime-Nom |
1 µs
|
1 µs
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.25 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
3
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Breakdown Voltage-Min |
|
100 V
|
| Diode Capacitance-Nom |
|
0.2 pF
|
| Diode Forward Resistance-Max |
|
4200 Ω
|
| Diode Res Test Current |
|
0.01 mA
|
| Diode Res Test Frequency |
|
100 MHz
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reverse Test Voltage |
|
|
| Technology |
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|