BAS16-T
vs
1N914
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
RECTRON LTD
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
R-PDSO-G3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.70
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Application |
FAST RECOVERY
|
|
| Breakdown Voltage-Min |
75 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
1 V
|
| JESD-30 Code |
R-PDSO-G3
|
O-LALF-W2
|
| Non-rep Pk Forward Current-Max |
2 A
|
4 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
0.15 A
|
0.2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Power Dissipation-Max |
0.225 W
|
0.5 W
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
1 µA
|
5 µA
|
| Reverse Recovery Time-Max |
0.006 µs
|
0.004 µs
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Base Number Matches |
2
|
69
|
| Rohs Code |
|
No
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
DO-35
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
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