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BAS21-E3-18 vs BAS216,135 feature comparison

BAS21-E3-18 Vishay Intertechnologies

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BAS216,135 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT PACKAGE-3 R-CDSO-R2
Pin Count 3 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay NXP
Application FAST RECOVERY
Configuration COMMON CATHODE, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G3 R-CDSO-R2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 2.5 A 4 A
Number of Elements 2 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.5 W 0.4 W
Rep Pk Reverse Voltage-Max 250 V 85 V
Reverse Current-Max 0.1 µA 1 µA
Reverse Recovery Time-Max 0.05 µs 0.004 µs
Reverse Test Voltage 200 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING WRAP AROUND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

Compare BAS21-E3-18 with alternatives

Compare BAS216,135 with alternatives