BAS21J,115 vs BAS21E6327HTSA1 feature comparison

BAS21J,115 NXP Semiconductors

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BAS21E6327HTSA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Transferred End Of Life
Ihs Manufacturer NXP SEMICONDUCTORS INFINEON TECHNOLOGIES AG
Part Package Code SOD SOT-23
Package Description PLASTIC, SC-90, 2 PIN R-PDSO-G3
Pin Count 2 3
Manufacturer Package Code SOD323F
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.25 V
JESD-30 Code R-PDSO-F2 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 1.7 A 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 300 V 200 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN Tin (Sn)
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 1
Pbfree Code Yes
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Breakdown Voltage-Min 250 V
Power Dissipation-Max 0.35 W

Compare BAS21J,115 with alternatives

Compare BAS21E6327HTSA1 with alternatives