BAS21VD,165
vs
BAS21LT3
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MOTOROLA INC
|
| Part Package Code |
TSOP
|
SOT-23
|
| Package Description |
R-PDSO-G6
|
R-PDSO-G3
|
| Pin Count |
6
|
3
|
| Manufacturer Package Code |
SOT457
|
CASE 318-08
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
|
| Application |
GENERAL PURPOSE
|
|
| Configuration |
SEPARATE, 3 ELEMENTS
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
3
|
1
|
| Number of Terminals |
6
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.2 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.25 W
|
0.225 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
250 V
|
|
| Reverse Current-Max |
100 µA
|
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.05 µs
|
| Reverse Test Voltage |
200 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-236AB
|
| Number of Phases |
|
1
|
|
|
|
Compare BAS21VD,165 with alternatives
Compare BAS21LT3 with alternatives