BAS29,215 vs CMPD1001TIN/LEAD feature comparison

BAS29,215 NXP Semiconductors

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CMPD1001TIN/LEAD Central Semiconductor Corp

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Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS CENTRAL SEMICONDUCTOR CORP
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 3 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.35 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 110 V 90 V
Reverse Current-Max 0.1 µA 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Date Of Intro 2018-01-31
Application GENERAL PURPOSE
Breakdown Voltage-Min 90 V
Operating Temperature-Min -65 °C
Reverse Test Voltage 90 V

Compare BAS29,215 with alternatives

Compare CMPD1001TIN/LEAD with alternatives