BAS32L
vs
BAS32L,135
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Date Of Intro |
1988-06-28
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Standard |
IEC-60134
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
TIN
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
6
|
1
|
| Part Package Code |
|
MELF
|
| Package Description |
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD80C
|
| Factory Lead Time |
|
4 Weeks
|
| Forward Voltage-Max (VF) |
|
1 V
|
| Non-rep Pk Forward Current-Max |
|
2 A
|
| Qualification Status |
|
Not Qualified
|
| Reverse Current-Max |
|
5 µA
|
|
|
|
Compare BAS32L with alternatives
Compare BAS32L,135 with alternatives