BAT86,113 vs BAT86-TAP feature comparison

BAT86,113 NXP Semiconductors

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BAT86-TAP Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS VISHAY SEMICONDUCTORS
Part Package Code DO-34 DO-35
Package Description HERMETIC SEALED, GLASS PACKAGE-2 O-LALF-W2
Pin Count 2 2
Manufacturer Package Code SOD68
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Factory Lead Time 4 Weeks
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 0.3 V
JEDEC-95 Code DO-34 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3 e2
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Reference Standard CECC50001-059
Rep Pk Reverse Voltage-Max 35 V 50 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.004 µs 0.005 µs
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN Tin/Silver (Sn96.5Ag3.5)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 1
Pbfree Code Yes
Power Dissipation-Max 0.2 W

Compare BAT86,113 with alternatives

Compare BAT86-TAP with alternatives