BAV16L
vs
1N4151TR
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
CENTRAL SEMICONDUCTOR CORP
|
| Part Package Code |
DFN1006-2
|
|
| Package Description |
R-PBCC-N2
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
FAST RECOVERY
|
|
| Breakdown Voltage-Min |
75 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
|
| JESD-30 Code |
R-PBCC-N2
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
2 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.15 A
|
0.15 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
CHIP CARRIER
|
LONG FORM
|
| Power Dissipation-Max |
0.2 W
|
|
| Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.002 µs
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
NO LEAD
|
WIRE
|
| Terminal Position |
BOTTOM
|
AXIAL
|
| Base Number Matches |
2
|
3
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.10.00.70
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
DO-35
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare BAV16L with alternatives
Compare 1N4151TR with alternatives