BAV19WSTR vs BAS19-B0RFG feature comparison

BAV19WSTR Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

BAS19-B0RFG Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Date Of Intro 2019-04-04
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.25 W 0.25 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Package Description GREEN, PLASTIC PACKAGE-3
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Terminal Finish MATTE TIN

Compare BAV19WSTR with alternatives

Compare BAS19-B0RFG with alternatives