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BAV23 vs BAV23,215 feature comparison

BAV23 YAGEO Corporation

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BAV23,215 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 2 2
Number of Terminals 4 4
Output Current-Max 0.2 A 0.225 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 10 2
Rohs Code Yes
Part Package Code SOT-143
Package Description PLASTIC PACKAGE-4
Pin Count 4
Manufacturer Package Code SOT143B
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Additional Feature HALOGEN FREE
Application GENERAL PURPOSE
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 2.5 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W
Rep Pk Reverse Voltage-Max 250 V
Reverse Current-Max 0.1 µA
Reverse Test Voltage 200 V
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

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Compare BAV23,215 with alternatives