BAV99-T1 vs BAV99T feature comparison

BAV99-T1 Sangdest Microelectronics (Nanjing) Co Ltd

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BAV99T Galaxy Microelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description R-PDSO-G3 SOT-523, 3 PIN
Reach Compliance Code unknown unknown
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 3 3
Output Current-Max 0.15 A 0.155 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.15 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 85 V
Reverse Recovery Time-Max 0.006 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 3 16
Part Package Code SOT-523
ECCN Code EAR99
HTS Code 8541.10.00.70
Application FAST RECOVERY
Breakdown Voltage-Min 85 V
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 4 A
Number of Phases 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 100 µA
Reverse Test Voltage 75 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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