BB135-T vs 1SV214TPHR4 feature comparison

BB135-T NXP Semiconductors

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1SV214TPHR4 Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Package Description R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 8.9 5.9
Diode Capacitance-Nom 19.25 pF 15.21 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA 0.01 µA
Reverse Test Voltage 30 V 28 V
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 3 1
Additional Feature SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
Breakdown Voltage-Min 30 V

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