BB151,115
vs
BBY62TRL
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Part Package Code |
SC-76
|
|
Package Description |
R-PDSO-G2
|
R-PDSO-G4
|
Pin Count |
2
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Configuration |
SINGLE
|
SEPARATE, 2 ELEMENTS
|
Diode Capacitance Ratio-Min |
1.45
|
9.7
|
Diode Capacitance-Nom |
19.1 pF
|
17.5 pF
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
JESD-30 Code |
R-PDSO-G2
|
R-PDSO-G4
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
2
|
Number of Terminals |
2
|
4
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
Base Number Matches |
1
|
2
|
Frequency Band |
|
ULTRA HIGH FREQUENCY
|
|
|
|
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