BB181,335
vs
1SV214TPHR4
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
TOSHIBA CORP
|
| Part Package Code |
SOD
|
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
SOD523
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00
|
8541.10.00.80
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
NXP
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance Ratio-Min |
12
|
5.9
|
| Diode Capacitance-Nom |
12.5 pF
|
15.21 pF
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Rep Pk Reverse Voltage-Max |
30 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
R-PDSO-G2
|
| Additional Feature |
|
SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
|
| Breakdown Voltage-Min |
|
30 V
|
| Diode Element Material |
|
SILICON
|
| Frequency Band |
|
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
|
R-PDSO-G2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
125 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Qualification Status |
|
Not Qualified
|
| Reverse Current-Max |
|
0.01 µA
|
| Reverse Test Voltage |
|
28 V
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
|
|
|
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