BB181,335 NXP SemiconductorsBuy Now Datasheet |
1SV293 Toshiba America Electronic ComponentsBuy Now Datasheet |
Rohs Code | Yes | No |
---|---|---|
Part Life Cycle Code | Obsolete | Active |
Ihs Manufacturer | NXP SEMICONDUCTORS | TOSHIBA CORP |
Part Package Code | SOD | SOD |
Pin Count | 2 | 2 |
Manufacturer Package Code | SOD523 | |
Reach Compliance Code | compliant | unknown |
ECCN Code | EAR99 | EAR99 |
HTS Code | 8541.10.00 | 8541.10.00.80 |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | NXP | |
Configuration | SINGLE | SINGLE |
Diode Capacitance Ratio-Min | 12 | 1.55 |
Diode Capacitance-Nom | 12.5 pF | 19 pF |
Diode Type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | 1 |
Peak Reflow Temperature (Cel) | 260 | 240 |
Rep Pk Reverse Voltage-Max | 30 V | 10 V |
Surface Mount | YES | YES |
Terminal Finish | Tin (Sn) | |
Time@Peak Reflow Temperature-Max (s) | 30 | NOT SPECIFIED |
Variable Capacitance Diode Classification | ABRUPT | ABRUPT |
Base Number Matches | 1 | 1 |
Pbfree Code | No | |
Package Description | R-PDSO-G2 | |
Breakdown Voltage-Min | 10 V | |
Diode Cap Tolerance | 5.26% | |
Diode Element Material | SILICON | |
Frequency Band | ULTRA HIGH FREQUENCY | |
JESD-30 Code | R-PDSO-G2 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Qualification Status | Not Qualified | |
Reverse Current-Max | 0.003 µA | |
Reverse Test Voltage | 10 V | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |