BB181,335 vs 1SV293 feature comparison

BB181,335 NXP Semiconductors

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1SV293 Toshiba America Electronic Components

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code SOD SOD
Pin Count 2 2
Manufacturer Package Code SOD523
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00 8541.10.00.80
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 12 1.55
Diode Capacitance-Nom 12.5 pF 19 pF
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Peak Reflow Temperature (Cel) 260 240
Rep Pk Reverse Voltage-Max 30 V 10 V
Surface Mount YES YES
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pbfree Code No
Package Description R-PDSO-G2
Breakdown Voltage-Min 10 V
Diode Cap Tolerance 5.26%
Diode Element Material SILICON
Frequency Band ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G2
Number of Terminals 2
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Reverse Current-Max 0.003 µA
Reverse Test Voltage 10 V
Terminal Form GULL WING
Terminal Position DUAL

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