BB215TRL vs 1SV214TPHR4 feature comparison

BB215TRL YAGEO Corporation

Buy Now Datasheet

1SV214TPHR4 Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PHILIPS COMPONENTS TOSHIBA CORP
Package Description O-LELF-R2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 30 V 30 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 7.6 5.9
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code O-LELF-R2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form WRAP AROUND GULL WING
Terminal Position END DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 2 1
Additional Feature SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
Diode Capacitance-Nom 15.21 pF
Operating Temperature-Max 125 °C
Reverse Current-Max 0.01 µA
Reverse Test Voltage 28 V

Compare BB215TRL with alternatives

Compare 1SV214TPHR4 with alternatives