BB215TRL
vs
1SV214TPHR4
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
TOSHIBA CORP
|
| Package Description |
O-LELF-R2
|
R-PDSO-G2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
3% MATCHED SETS ARE AVAILABLE
|
SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance Ratio-Min |
7.6
|
5.9
|
| Diode Capacitance-Nom |
2 pF
|
15.21 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
ULTRA HIGH FREQUENCY
|
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
O-LELF-R2
|
R-PDSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
WRAP AROUND
|
GULL WING
|
| Terminal Position |
END
|
DUAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
2
|
1
|
| Breakdown Voltage-Min |
|
30 V
|
| Operating Temperature-Max |
|
125 °C
|
| Reverse Current-Max |
|
0.01 µA
|
| Reverse Test Voltage |
|
28 V
|
|
|
|
Compare BB215TRL with alternatives
Compare 1SV214TPHR4 with alternatives