BB215TRL vs 1SV293 feature comparison

BB215TRL NXP Semiconductors

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1SV293 Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Package Description O-LELF-R2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature 3% MATCHED SETS ARE AVAILABLE
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 7.6 1.55
Diode Capacitance-Nom 2 pF 19 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JESD-30 Code O-LELF-R2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form WRAP AROUND GULL WING
Terminal Position END DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 2 1
Pbfree Code No
Rohs Code No
Part Package Code SOD
Pin Count 2
Breakdown Voltage-Min 10 V
Diode Cap Tolerance 5.26%
Operating Temperature-Max 125 °C
Peak Reflow Temperature (Cel) 240
Rep Pk Reverse Voltage-Max 10 V
Reverse Current-Max 0.003 µA
Reverse Test Voltage 10 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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