BB405B-AMMOPAK vs 1SV293 feature comparison

BB405B-AMMOPAK NXP Semiconductors

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1SV293 Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Package Description O-LALF-W2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature 3% MATCHED SETS ARE AVAILABLE
Breakdown Voltage-Min 30 V 10 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 7.6 1.55
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JESD-30 Code O-LALF-W2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 100 °C 125 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA 0.003 µA
Reverse Test Voltage 28 V 10 V
Surface Mount NO YES
Terminal Form WIRE GULL WING
Terminal Position AXIAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Part Package Code SOD
Pin Count 2
Diode Cap Tolerance 5.26%
Diode Capacitance-Nom 19 pF
Peak Reflow Temperature (Cel) 240
Rep Pk Reverse Voltage-Max 10 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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