BB804R215
vs
BB201,215
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G3
|
PLASTIC PACKAGE-3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00
|
| Breakdown Voltage-Min |
18 V
|
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Capacitance Ratio-Min |
1.65
|
3.1
|
| Diode Capacitance-Nom |
42.75 pF
|
95 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
VERY HIGH FREQUENCY
|
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.25 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
0.02 µA
|
|
| Reverse Test Voltage |
16 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
TO-236
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
SOT23
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
NXP
|
| Diode Cap Tolerance |
|
6.81%
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Rep Pk Reverse Voltage-Max |
|
15 V
|
| Terminal Finish |
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BB804R215 with alternatives
Compare BB201,215 with alternatives