BBY51
vs
BB181,335
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00
|
| Breakdown Voltage-Min |
7 V
|
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
SINGLE
|
| Diode Capacitance Ratio-Min |
1.55
|
12
|
| Diode Capacitance-Nom |
5.3 pF
|
12.5 pF
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Qualification Status |
Not Qualified
|
|
| Reverse Current-Max |
0.01 µA
|
|
| Reverse Test Voltage |
6 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Variable Capacitance Diode Classification |
HYPERABRUPT
|
ABRUPT
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
SOD
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD523
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
NXP
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Rep Pk Reverse Voltage-Max |
|
30 V
|
| Terminal Finish |
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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