BBY51-03WE6433
vs
BB181,335
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NXP SEMICONDUCTORS
|
Part Package Code |
SOD
|
SOD
|
Package Description |
R-PDSO-G2
|
|
Pin Count |
2
|
2
|
Manufacturer Package Code |
SOD-323
|
SOD523
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00
|
Breakdown Voltage-Min |
7 V
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Cap Tolerance |
6.48%
|
|
Diode Capacitance Ratio-Min |
1.55
|
12
|
Diode Capacitance-Nom |
5.4 pF
|
12.5 pF
|
Diode Element Material |
SILICON
|
|
Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
JESD-30 Code |
R-PDSO-G2
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Qualification Status |
Not Qualified
|
|
Rep Pk Reverse Voltage-Max |
7 V
|
30 V
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Variable Capacitance Diode Classification |
HYPERABRUPT
|
ABRUPT
|
Base Number Matches |
2
|
1
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
NXP
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Terminal Finish |
|
Tin (Sn)
|
|
|
|
Compare BBY51-03WE6433 with alternatives
Compare BB181,335 with alternatives