BBY62,215 vs 1SV293 feature comparison

BBY62,215 NXP Semiconductors

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1SV293 Toshiba America Electronic Components

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code SOT-143 SOD
Package Description R-PDSO-G4 R-PDSO-G2
Pin Count 4 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 30 V 10 V
Configuration SEPARATE, 2 ELEMENTS SINGLE
Diode Capacitance-Nom 16.5 pF 19 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G4 R-PDSO-G2
JESD-609 Code e3
Number of Elements 2 1
Number of Terminals 4 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 30 V 10 V
Reverse Current-Max 0.01 µA 0.003 µA
Reverse Test Voltage 28 V 10 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pbfree Code No
Diode Cap Tolerance 5.26%
Diode Capacitance Ratio-Min 1.55
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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