BCP56L99Z vs BCP5616QTC feature comparison

BCP56L99Z Texas Instruments

Buy Now Datasheet

BCP5616QTC Diodes Incorporated

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Configuration SINGLE SINGLE
JEDEC-95 Code TO-261
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Collector Current-Max (IC) 1 A
Collector-Base Capacitance-Max 25 pF
Collector-Emitter Voltage-Max 80 V
DC Current Gain-Min (hFE) 25
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 2 W
Reference Standard AEC-Q101; IATF 16949
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transition Frequency-Nom (fT) 150 MHz
VCEsat-Max 0.5 V

Compare BCP56L99Z with alternatives

Compare BCP5616QTC with alternatives