BFR193E6327 vs BFG520W,115 feature comparison

BFR193E6327 Siemens

Buy Now Datasheet

BFG520W,115 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer SIEMENS A G NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.08 A 0.07 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND L BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 3 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 8000 MHz 9000 MHz
Base Number Matches 3 1
Rohs Code Yes
Part Package Code SOP
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Manufacturer Package Code SOT343N
HTS Code 8541.21.00.75
Additional Feature LOW NOISE, HIGH RELIABILITY
Case Connection COLLECTOR
DC Current Gain-Min (hFE) 60
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.5 W
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare BFR193E6327 with alternatives

Compare BFG520W,115 with alternatives