BR3510(W) vs GBJ3510 feature comparison

BR3510(W) Galaxy Microelectronics

Buy Now Datasheet

GBJ3510 Diodes Incorporated

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD DIODES INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
Breakdown Voltage-Min 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 35 A 3.6 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Base Number Matches 2 11
Samacsys Manufacturer Diodes Incorporated
Case Connection ISOLATED
Diode Element Material SILICON
JESD-30 Code R-PSFM-T4
Number of Terminals 4
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Reference Standard UL RECOGNIZED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

Compare BR3510(W) with alternatives

Compare GBJ3510 with alternatives