BSP126/T3 vs BSP126,115 feature comparison

BSP126/T3 NXP Semiconductors

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BSP126,115 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max 7 Ω 5 Ω
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code SC-73
Package Description PLASTIC, SMD, SC-73, 4 PIN
Pin Count 4
Manufacturer Package Code SOT223
HTS Code 8541.29.00.75
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 0.375 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Time@Peak Reflow Temperature-Max (s) 30

Compare BSP126/T3 with alternatives

Compare BSP126,115 with alternatives