BSS123G-3L vs BSS123LT3G feature comparison

BSS123G-3L Galaxy Microelectronics

Buy Now Datasheet

BSS123LT3G onsemi

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD ON SEMICONDUCTOR
Package Description , ROHS COMPLIANT, CASE 318-08, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 10 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF 4 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W 0.225 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOT-23
Pin Count 3
Manufacturer Package Code CASE 318-08
JEDEC-95 Code TO-236
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish TIN

Compare BSS123G-3L with alternatives

Compare BSS123LT3G with alternatives