BSS123_R2_00001
vs
XBSS123
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
CALOGIC LLC
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
PANJIT
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
0.17 A
|
0.17 A
|
Drain-source On Resistance-Max |
6 Ω
|
6 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
7.8 pF
|
|
JESD-30 Code |
R-PDSO-G3
|
S-XUUC-N2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
UNCASED CHIP
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.5 W
|
|
Power Dissipation-Max (Abs) |
0.5 W
|
|
Reference Standard |
IEC-61249; MIL-STD-750
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
DUAL
|
UPPER
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
HTS Code |
|
8542.90.00.00
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare BSS123_R2_00001 with alternatives
Compare XBSS123 with alternatives