BSS192E6327 vs BSS192,115 feature comparison

BSS192E6327 Infineon Technologies AG

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BSS192,115 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE CMOS COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 240 V 240 V
Drain Current-Max (ID) 0.15 A 0.2 A
Drain-source On Resistance-Max 20 Ω 12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF 15 pF
JESD-30 Code R-PSSO-F3 R-PSSO-F3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code Yes
Part Package Code SOT-89
Pin Count 3
Manufacturer Package Code SOT89
HTS Code 8541.21.00.75
JEDEC-95 Code TO-243AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 1 W
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare BSS192E6327 with alternatives

Compare BSS192,115 with alternatives