BYV26E(Z) vs HS1MF-TR3G feature comparison

BYV26E(Z) Galaxy Microelectronics

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HS1MF-TR3G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 2.5 V 1.7 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Recovery Time-Max 0.075 µs 0.075 µs
Surface Mount NO YES
Base Number Matches 1 1
HTS Code 8541.10.00.80
Date Of Intro 2019-06-24
Additional Feature FREE WHEELING DIODE
Diode Element Material SILICON
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 5 µA
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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