BYV26E(Z) vs UST1M feature comparison

BYV26E(Z) Galaxy Microelectronics

Buy Now Datasheet

UST1M Diotec Semiconductor AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD DIOTEC SEMICONDUCTOR AG
Reach Compliance Code unknown compliant
ECCN Code EAR99
Application GENERAL PURPOSE ULTRA FAST RECOVERY
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 2.5 V 1.7 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Recovery Time-Max 0.075 µs 0.075 µs
Surface Mount NO YES
Base Number Matches 1 1
Diode Element Material SILICON
JEDEC-95 Code DO-221AC
JESD-30 Code R-PDSO-F2
Number of Terminals 2
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 5 µA
Reverse Test Voltage 1000 V
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare BYV26E(Z) with alternatives

Compare UST1M with alternatives