BYV79EB-100T/R vs HER1601PTHC0G feature comparison

BYV79EB-100T/R NXP Semiconductors

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HER1601PTHC0G Taiwan Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PSSO-G2 TO-3P, 3 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature SURGE CAPABILITY LOW POWER LOSS
Application ULTRA FAST SOFT RECOVERY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.4 V 1 V
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Non-rep Pk Forward Current-Max 160 A 200 A
Number of Elements 1 2
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 14 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 50 V
Reverse Recovery Time-Max 0.03 µs 0.05 µs
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Rohs Code Yes
JEDEC-95 Code TO-247AD
JESD-609 Code e3
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; UL RECOGNIZED
Reverse Current-Max 10 µA
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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