BZV55-C39 vs 1N5256(DO-35) feature comparison

BZV55-C39 NXP Semiconductors

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1N5256(DO-35) Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 O-LALF-W2
Pin Count 2 2
Reach Compliance Code compliant unknown
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 130 Ω
JESD-30 Code O-LELF-R2 O-LALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.417 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 39 V 30 V
Reverse Current-Max 0.05 µA 10 µA
Surface Mount YES NO
Technology ZENER ZENER
Terminal Finish TIN TIN LEAD
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Voltage Temp Coeff-Max 41.2 mV/°C
Voltage Tol-Max 5% 20%
Working Test Current 2 mA 4.2 mA
Base Number Matches 10 1
Part Package Code DO-7
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-204AA

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