BZV85-C12,113
vs
1N4742A-GT3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Part Package Code |
DO-4
|
|
| Package Description |
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
|
O-LALF-W2
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
SOD66
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Factory Lead Time |
4 Weeks
|
|
| Additional Feature |
CAPACITANCE IS CAPTURED FROM THE GRAPH
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
10 Ω
|
|
| JEDEC-95 Code |
DO-41
|
DO-41
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
CECC50005-010
|
|
| Reference Voltage-Nom |
12 V
|
12 V
|
| Reverse Current-Max |
0.2 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Voltage Temp Coeff-Max |
10.8 mV/°C
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
20 mA
|
21 mA
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare BZV85-C12,113 with alternatives
Compare 1N4742A-GT3 with alternatives