BZW04-256 vs BZW04-23BHB0G feature comparison

BZW04-256 EIC Semiconductor Inc

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BZW04-23BHB0G Taiwan Semiconductor

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 300 V 27.05 V
Clamping Voltage-Max 414 V 37.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 256 V 23.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Package Description O-PALF-W2
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 28.4 V
Breakdown Voltage-Min 25.7 V
Case Connection ISOLATED
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Terminal Finish PURE TIN

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