BZW06-10 vs P6KE12AB0G feature comparison

BZW06-10 Galaxy Semi-Conductor Co Ltd

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P6KE12AB0G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Clamping Voltage-Max 16.7 V 16.7 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 10.2 V 10.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 10 1
Package Description O-PALF-W2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 12.6 V
Breakdown Voltage-Min 11.4 V
Breakdown Voltage-Nom 12 V
Case Connection ISOLATED
Configuration SINGLE
JEDEC-95 Code DO-204AC
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 5 W
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10

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