BZW06-15 vs JANTX1N6464 feature comparison

BZW06-15 Taiwan Semiconductor

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JANTX1N6464 Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROCHIP TECHNOLOGY INC
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Max 18.9 V
Breakdown Voltage-Min 17.1 V
Breakdown Voltage-Nom 18 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 25.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-XALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.7 W 2.5 W
Rep Pk Reverse Voltage-Max 15.3 V 15 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 40 3
Factory Lead Time 25 Weeks
Qualification Status Qualified
Reference Standard MIL-19500/551C

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