BZW06-33B vs BZW04-342BR1 feature comparison

BZW06-33B Digitron Semiconductors

Buy Now Datasheet

BZW04-342BR1 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIGITRON SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 37.1 V 380 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 53.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-204AL
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 600 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.7 W 1 W
Rep Pk Reverse Voltage-Max 33.3 V 342 V
Reverse Current-Max 1 µA
Reverse Test Voltage 33.3 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 1
Package Description O-PALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 420 V

Compare BZW04-342BR1 with alternatives