CAT34C02HU3I-GT4
vs
CAT34C02VP2I-GT4A
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
CATALYST SEMICONDUCTOR INC
|
ROCHESTER ELECTRONICS LLC
|
| Part Package Code |
SON
|
SON
|
| Package Description |
2 X 3 MM, ROHS COMPLIANT, MO-229, UDFN-8
|
2 X 3 MM, HALOGEN FREE, BFR FREE AND ROHS COMPLIANT, MO-229, TDFN-8
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.51
|
|
| Clock Frequency-Max (fCLK) |
0.4 MHz
|
0.4 MHz
|
| JESD-30 Code |
R-PDSO-N8
|
R-PDSO-N8
|
| JESD-609 Code |
e4
|
e4
|
| Length |
3 mm
|
3 mm
|
| Memory Density |
2048 bit
|
256 bit
|
| Memory IC Type |
EEPROM
|
EEPROM
|
| Memory Width |
8
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Number of Words |
256 words
|
16 words
|
| Number of Words Code |
256
|
16
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
256X8
|
16X16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
HVSON
|
HVSON
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
|
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
|
| Parallel/Serial |
SERIAL
|
SERIAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Seated Height-Max |
0.55 mm
|
0.8 mm
|
| Serial Bus Type |
I2C
|
I2C
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
Nickel/Palladium/Gold (Ni/Pd/Au)
|
NICKEL PALLADIUM GOLD
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Pitch |
0.5 mm
|
0.5 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Width |
2 mm
|
2 mm
|
| Write Cycle Time-Max (tWC) |
5 ms
|
5 ms
|
| Base Number Matches |
2
|
2
|
| Additional Feature |
|
100 YEAR DATA RETENTION
|
|
|
|
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